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XP01554|XP1554 Datasheet

  • XP01554|XP1554

  • Composite Device - Composite Transistors

  • 91.50KB

  • 3頁

  • ETC

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Composite Transistors
XP01554
(XP1554)
Silicon NPN epitaxial planar type
(0.425)
0.20
鹵0.05
0.12
+0.05
鈥?.02
Unit: mm
For high-speed switching
鈻?/div>
Features
鈥?/div>
Two elements incorporated into one package
(Emitter-coupled transistors)
鈥?/div>
Reduction of the mounting area and assembly cost by one half
鈥?/div>
Low collector-emitter saturation voltage V
CE(sat)
10藲
5
4
1.25
鹵0.10
2.1
鹵0.1
1
2
3
(0.65) (0.65)
1.3
鹵0.1
2.0
鹵0.1
0.9
鹵0.1
鈥?/div>
2SC3757
脳
2
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (E-B short)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
CBO
I
C
I
CP
P
T
T
j
T
stg
Rating
40
40
5
100
300
150
150
鈭?5
to
+150
Unit
V
V
V
mA
mA
mW
擄C
擄C
1: Base (Tr1)
2: Emitter
3: Base (Tr2)
EIAJ: SC-88A
0 to 0.1
鈻?/div>
Absolute Maximum Ratings
T
a
=
25擄C
0.9
+0.2
鈥?.1
鈻?/div>
Basic Part Number
4: Collector (Tr2)
5: Collector (Tr1)
SMini5-G1 Package
Marking Symbol: EU
Internal Connection
5
4
Tr1
5藲
Tr2
1
2
3
鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Turn-on time
Turn-off time
Storage time
Symbol
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
on
t
off
t
stg
Conditions
V
CB
=
15 V, I
E
=
0
V
EB
=
4 V, I
C
=
0
V
CE
=
1 V, I
C
=
10 mA
I
C
=
10 mA, I
B
=
1 mA
I
C
=
10 mA, I
B
=
1 mA
V
CB
=
10 V, I
E
= 鈭?0
mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
Refer to the switching time measurement
circuit
450
2
17
17
10
6
60
0.17
Min
Typ
Max
0.1
0.1
200
0.25
1.0
Unit
碌A(chǔ)
碌A(chǔ)
錚?/div>
V
V
MHz
pF
ns
ns
ns
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Note) The part number in the parenthesis shows conventional part number.
Publication date: February 2004
SJJ00150BED
0.2
鹵0.1
1

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